NON-IDEAL I-V EFFECTS
The I-V
characteristics designed so far neglect many effects that are important in
modern deep-submicron processes.
§ Velocity
Saturation and Mobility Degradation
§ Channel
length modulation
§ Sub
threshold conduction
§ Tunneling
§ Junction
leakage
§ Body
effect
§ Temperature
and Geometry dependence
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