Chapter: VLSI Design : CMOS Technology
Ideal I-V characteristics of MOS Transistor
1. MOS I-V characteristics
2. Threshold voltage
IDEAL I-V CHARACTERISTICS
1. MOS I-V
characteristics
·
If Vgd < Vt, channel
pinches off near drain
·
When Vds > Vdsat
= Vgs – Vt
·
Now drain voltage no longer increases
current
2. Threshold
voltage
From
equation, threshold voltage may be varied by changing:
·
The doping concentration(NA)
·
The oxide capacitance(cox )
·
Surface state charge(Qfc )
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VLSI Design : CMOS Technology : Ideal I-V characteristics of MOS Transistor |
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VLSI Design : CMOS Technology