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Chapter: VLSI Design : CMOS Technology

Non ideal I-V effects

The I-V characteristics designed so far neglect many effects that are important in modern deep-submicron processes.

NON-IDEAL I-V EFFECTS

 

The I-V characteristics designed so far neglect many effects that are important in modern deep-submicron processes.

 

§   Velocity Saturation and Mobility Degradation

§   Channel length modulation

§   Sub threshold conduction

§   Tunneling

§   Junction leakage

§   Body effect

§   Temperature and Geometry dependence

 

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