Chapter: Linear Integrated Ciruits : IC Fabrication and Circuit Configuration for Linear ICs
Schottky transistor
The cross-sectional view of a transistor employing a Schottky barrier diode clamped between its base and collector regions is shown in figure.
Schottky transistor:
The
cross-sectional view of a transistor employing a Schottky barrier diode clamped
between its base and collector regions is shown in figure. The equivalent
circuit and the symbolic representation of the Schottky transistor are shown in
figure. The Schottky diode is formed by allowing aluminium metallization for
the base lead which makes contact with the N-type collector region also as
shown in figure.
When the
base current is increased to saturate the transistor, the voltage at the
collector C reduces and this makes the diode Ds conduct. The base to collector
voltage reduces to 0.4V, which is less the cut-in-voltage of a silicon
base-collector junction. Therefore, the transistor does not get saturated.
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Linear Integrated Ciruits : IC Fabrication and Circuit Configuration for Linear ICs : Schottky transistor |
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Linear Integrated Ciruits : IC Fabrication and Circuit Configuration for Linear ICs