Chapter: Power Electronics : Power Semi Conductor Devices
Insulated Gate Bipolar Transistor(IGBT)
The n+ layer substrate at the drain in the power MOSFET is substituted by p+ layer substrate and called as collector.
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT)
BASIC
CONSTRUCTION-
The n+
layer substrate at the drain in the power MOSFET is substituted by p+ layer
substrate and called as collector. When gate to emitter voltage is positive,n-
channel is formed in the p- region. This n- channel short circuit the n- and n+
layer and an electron movement in n channel cause hole injection from
p+subtrate layer to n- layer.
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Power Electronics : Power Semi Conductor Devices : Insulated Gate Bipolar Transistor(IGBT) |
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Power Electronics : Power Semi Conductor Devices