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It is the amount of impurity added to a pure semiconductor.
It is the base or starting material for a semiconductor device.
3. Depletion Region:
The semiconductor device has two regions, one region doped with p-type impurity and the second doped with n-type impurity. The free electrons in the n-type material diffuse across the junction into the p-type; similarly the holes in the p-type material diffuse across the junction into the n-type material. Due to this, a form of uncovered acceptor and donor ions are left uncovered with immobile charges across the junction.
4. Drift region:
It is a region where the immobile acceptor and donor ions break.
5. Barrier Potential:
The potential/ voltage required to break the depletion region is known as barrier potential. At 25oC the barrier potential is 0.3V for germanium and 0.7V for silicon.
6. Break down voltage:
The voltage at which the pn junction breaks and the device starts conducting.
It is the application of voltage to a semiconductor device.
8. Forward Bias:
The forward bias is applied to a semiconductor device by connecting the positive terminal of the battery to p-type material and the negative terminal of the battery to n-type material.
9. Reverse Bias:
The reverse bias is applied to a semiconductor device by connecting the positive terminal of the battery to n-type material and the negative terminal of the battery to p-type material.
10. On-State voltage drop:
When the power semiconductor device is turned-on, voltage across the device drops to 0.6 v (for Silicon material) to o.3 v (for Germanium).
11. Off-State voltage drop:
When the power semiconductor device is turned-off, voltage across the device is nothing but the applied source voltage
12. Latching current:
It is the minimum value of anode current, above which the SCR starts conducting.
13. Holding current:
It is the minimum value of anode current, below which the SCR turns-off.
14. Active region:
A power BJT operates under active region when the emitter-base junction is forward biased and the collector-base junction is reverse biased.
15. Cut-off region:
A power BJT operates under cut-off region when both the emitter-base junction and the collector-base junctions are reverse biased. Hence no collector current and transistor is in off position.
16. Saturation region:
A power BJT operates under saturation region when both the emitter-base junction and the collector-base junctions are forward biased.
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