Glossary
1. Doping:
It is the
amount of impurity added to a pure semiconductor.
2. Substrate:
It is the
base or starting material for a semiconductor device.
3. Depletion Region:
The
semiconductor device has two regions, one region doped with p-type impurity and
the second doped with n-type impurity. The free electrons in the n-type
material diffuse across the junction into the p-type; similarly the holes in
the p-type material diffuse across the junction into the n-type material. Due
to this, a form of uncovered acceptor and donor ions are left uncovered with
immobile charges across the junction.
4. Drift region:
It is a
region where the immobile acceptor and donor ions break.
5. Barrier Potential:
The
potential/ voltage required to break the depletion region is known as barrier
potential. At 25oC the barrier potential is 0.3V for germanium and
0.7V for silicon.
6. Break down voltage:
The
voltage at which the pn junction breaks and the device starts conducting.
7. Biasing:
It is the
application of voltage to a semiconductor device.
8. Forward Bias:
The
forward bias is applied to a semiconductor device by connecting the positive
terminal of the battery to p-type material and the negative terminal of the
battery to n-type material.
9. Reverse Bias:
The
reverse bias is applied to a semiconductor device by connecting the positive
terminal of the battery to n-type material and the negative terminal of the
battery to p-type material.
10. On-State voltage drop:
When the
power semiconductor device is turned-on, voltage across the device drops to 0.6
v (for Silicon material) to o.3 v (for Germanium).
11. Off-State voltage drop:
When the
power semiconductor device is turned-off, voltage across the device is nothing
but the applied source voltage
12. Latching current:
It is the
minimum value of anode current, above which the SCR starts conducting.
13. Holding current:
It is the
minimum value of anode current, below which the SCR turns-off.
14. Active region:
A power
BJT operates under active region when the emitter-base junction is forward
biased and the collector-base junction is reverse biased.
15. Cut-off region:
A power
BJT operates under cut-off region when both the emitter-base junction and the
collector-base junctions are reverse biased. Hence no collector current and
transistor is in off position.
16. Saturation region:
A power BJT operates under saturation region when both the emitter-base junction and the collector-base junctions are forward biased.
Related Topics
Privacy Policy, Terms and Conditions, DMCA Policy and Compliant
Copyright © 2018-2023 BrainKart.com; All Rights Reserved. Developed by Therithal info, Chennai.