Home | | Power Electronics | Insulated Gate Bipolar Transistor(IGBT)

Chapter: Power Electronics - Power Semi Conductor Devices

| Study Material, Lecturing Notes, Assignment, Reference, Wiki description explanation, brief detail |

Insulated Gate Bipolar Transistor(IGBT)

The n+ layer substrate at the drain in the power MOSFET is substituted by p+ layer substrate and called as collector.

INSULATED GATE BIPOLAR TRANSISTOR (IGBT)

BASIC CONSTRUCTION-

 

The n+ layer substrate at the drain in the power MOSFET is substituted by p+ layer substrate and called as collector. When gate to emitter voltage is positive,n- channel is formed in the p- region. This n- channel short circuit the n- and n+ layer and an electron movement in n channel cause hole injection from p+subtrate layer to n- layer.

 




Study Material, Lecturing Notes, Assignment, Reference, Wiki description explanation, brief detail


Copyright © 2018-2021 BrainKart.com; All Rights Reserved. (BS) Developed by Therithal info, Chennai.