INSULATED GATE BIPOLAR TRANSISTOR (IGBT)
The n+ layer substrate at the drain in the power MOSFET is substituted by p+ layer substrate and called as collector. When gate to emitter voltage is positive,n- channel is formed in the p- region. This n- channel short circuit the n- and n+ layer and an electron movement in n channel cause hole injection from p+subtrate layer to n- layer.
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