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Chapter: Power Electronics - Power Semi Conductor Devices

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Important Terms - Power Semi Conductor Devices

Power Electronics - Power Semi Conductor Devices - Important Terms - Power Semi Conductor Devices

Glossary

 

1. Doping:

It is the amount of impurity added to a pure semiconductor.

 

2. Substrate:

It is the base or starting material for a semiconductor device.

 

3. Depletion Region:

 

The semiconductor device has two regions, one region doped with p-type impurity and the second doped with n-type impurity. The free electrons in the n-type material diffuse across the junction into the p-type; similarly the holes in the p-type material diffuse across the junction into the n-type material. Due to this, a form of uncovered acceptor and donor ions are left uncovered with immobile charges across the junction.

 

4. Drift region:

It is a region where the immobile acceptor and donor ions break.

 

5. Barrier Potential:

 

The potential/ voltage required to break the depletion region is known as barrier potential. At 25oC the barrier potential is 0.3V for germanium and 0.7V for silicon.

 

6. Break down voltage:

The voltage at which the pn junction breaks and the device starts conducting.

 

7. Biasing:

It is the application of voltage to a semiconductor device.

 

8. Forward Bias:

 

The forward bias is applied to a semiconductor device by connecting the positive terminal of the battery to p-type material and the negative terminal of the battery to n-type material.

 

9. Reverse Bias:

 

The reverse bias is applied to a semiconductor device by connecting the positive terminal of the battery to n-type material and the negative terminal of the battery to p-type material.

 

10. On-State voltage drop:

 

When the power semiconductor device is turned-on, voltage across the device drops to 0.6 v (for Silicon material) to o.3 v (for Germanium).

 

11. Off-State voltage drop:

 

When the power semiconductor device is turned-off, voltage across the device is nothing but the applied source voltage

 

12. Latching current:

 

It is the minimum value of anode current, above which the SCR starts conducting.

 

13. Holding current:

It is the minimum value of anode current, below which the SCR turns-off.

 

14. Active region:

 

A power BJT operates under active region when the emitter-base junction is forward biased and the collector-base junction is reverse biased.

 

15. Cut-off region:

 

A power BJT operates under cut-off region when both the emitter-base junction and the collector-base junctions are reverse biased. Hence no collector current and transistor is in off position.

 

16. Saturation region:

A  power  BJT  operates  under  saturation  region  when  both  the  emitter-base junction      and the collector-base junctions are forward biased.

 

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