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P - N junction

P - N junction
When a p- type semiconductor is suitably joined to an n-type semiconductor the contact surface so formed is called p-n junction.



When a p- type semiconductor is suitably joined to an n-type semiconductor the contact surface so formed is called p-n junction. All the semiconductor devices contain one or more p-n junction. P-N junction is fabricated by special techniques namely growing, alloying and diffusion methods. The p-type semiconductor is having egative acceptor ions and positively charged electrons. The n-type semiconductor is having positive donor ions and negatively charged electrons. When the two pieces are joined together and suitably treated they form a p-n junction. The moment they form a p-n junction, some of the conduction electrons from n-type material diffuse over to the p- type material and undergo electron - hole recombination with the holes available in the valence band. Simultaneously holes from p-type material diffuse over to n- type material and undergo hole-electron combination with the electrons available in the conduction band. This process is called diffusion. When a p-n junction is connected across an electric supply, the junction is said to be under biasing. The potential difference across the p- n junction can be applied in two ways, namely- forward biasing and reverse biasing. When the positive terminal of a dc source is connected to p-type, and negative terminal is connected n-type semiconductor of a p-n junction, the junction is said to be in forward biasing. When the positive terminal of a dc source is connected to n-type, and negative terminal is connected p-type semiconductor of a p-n junction, the junction is said to be in reverse biasing. With forward bias, a low resistance path is set up in the p-n junction, and hence current flows through the circuit. With reverse bias, a high resistance path is set up and no current flows through the circuit. This property is best suited for rectification of ac into dc.



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