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Chapter: VLSI Design : Circuit Characterization and Simulation

Reliability - VLSI Design

1. Reliability Fundamentals and Scaling Principles 2. VLSI Reliability 3. Reliability of the Interconnect System 4. Transistor Reliability: Dielectric Breakdown, Hot Carriers and Parametric Stability 5. CMOS Latch-up and ESD

RELIABILITY

 

Yield and reliability are two of the cornerstones of a successful IC manufacturing technology along with product performance and cost. Many factors contribute to the achievement of high yield and reliability, and many of these also interact with product performance and cost.

 

 

A fundamental understanding of failure mechanisms and yield limitations enables the up-front achievement of these technology goals through circuit and layout design, device design, materials choices, process optimization, and thermo-mechanical considerations.

 

Failure isolation and analysis, defect analysis, low yield analysis, and materials analysis are critical methodologies for the improvement of yield and reliability.

 

Coordination of people in many disciplines is needed in order to achieve high yield and reliability. Each needs to understand the impact of their choices and methods on the final product.

 

 

Unfortunately, very little formal university training exists in these critical areas of IC reliability, yield, and failure analysis.

 

1. Reliability Fundamentals and Scaling Principles

 

§   The Reliability Bathtub Curve, Its Origin and Implications

§   Key Reliability Functions and Their Use in Reliability Analysis

§   Defect Screening Techniques and Their Effectiveness

§   Accelerated Testing and Estimation of Useful Operating Life

§   Reliability Data Collection and Analysis in Integrated Circuits

§   Past Technology Scaling Trends

 

2. VLSI Reliability

 

§   Power Density Trends: Operating temperature, activation energies for dominant VLSI failure mechanisms, and reliability impact

 

§   Reliability Strategies in Fabless Environments

 

3. Reliability of the Interconnect System

 

§   Physics and Statistics of Failure Mechanisms Associated with Interconnect Systems

§   Electro-migration of Al and Cu Interconnects

§   Mechanical Stress Driven Metal Voiding and Cracking

§   Low k Materials as Interlayer Dielectrics and Their Impact on Electro-migration

§   Thermo-mechanical Integrity of the Interconnect System

§   Key Technology Parameters: Materials choices, structural and geometric effects

§   Extreme Scaling Impact on Wear-out Time

§   Technology Solutions: Alloys, metal barriers, and engineering of interfaces

§   Improved Electro-migration Performance under Non-DC Currents and Short Lines

§   Interconnect Reliability Strategies in Fabless Environments

 

4. Transistor Reliability: Dielectric Breakdown, Hot Carriers and Parametric Stability

 

§   Physics, Statistics, and Scaling Impact on Failure Mechanisms

§   Reliability Performance of Thin Conventional Oxides: Defects, wear-out failures

 

§   Hot Carrier Performance and Parametric Stability of P- and N-channel Devices under DC and AC

 

§   High k Gate Dielectrics and Novel Transistor Configurations

§   Key Failure Mechanisms for Bipolar Transistors

 

§   Transistor Reliability Strategies in Fabless Environments

 

5. CMOS Latch-up and ESD

 

§ Physics,   Scaling   Impact,   and   Technology   Dependence   of   CMOS   Latch-up   and

Electrostatic Damage (ESD)

§ Technology and Design Based Solutions, Device Performance, and Manufacturability Constraints

 

§ Latch-up and ESD Assessment in Fabless Environments

 

6. Soft Errors, and Other Failure Mechanisms

 

§ Physics,  Scaling  Impact,  and  Technology  Dependence  of  Alpha  Particle  and  Cosmic

Ray Induced Soft Errors

 

§ Technology Solutions, Performance, and Manufacturability



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